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 MBR3100
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
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* * * * * * * * *
Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-ring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature High Surge Capacity Pb-Free Packages are Available*
SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES, 100 VOLTS
Mechanical Characteristics:
* Case: Epoxy, Molded * Weight: 1.1 Gram (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * *
Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Cathode indicated by Polarity Band
AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1
MARKING DIAGRAM
A MBR 3100 YYWWG G Max 100 Unit V A = Assembly Location YY = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TA = 100C (RqJA = 28C/W, Refer to P.C. Board Mounting, Note 3) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating and Storage Junction Temperature Range (Note 1) (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IO
3.0
A
IFSM
150
A
ORDERING INFORMATION
Device Package Axial Lead Axial Lead (Pb-Free) Axial Lead Axial Lead (Pb-Free) Shipping 500 Units / Bag 500 Units / Bag 1500/Tape & Reel 1500/Tape & Reel
TJ, Tstg dv/dt
-65 to +175 10
C V/ns
MBR3100 MBR3100G MBR3100RL MBR3100RLG
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
1
June, 2006 - Rev. 6
Publication Order Number: MBR3100/D
MBR3100
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient (see Note 3, Mounting Method 3) Symbol RqJA Max 28 Unit C/W
ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted)
Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 3.0 Amps, TL = 25C) (iF = 3.0 Amps, TL = 100C) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) TL = 25C TL = 100C 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Symbol vF 0.79 0.69 iR 0.6 20 mA Max Unit V
i , INSTANTANEOUS FORWARD CURRENT (AMPS) F
I , REVERSE CURRENT (mA) R
50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1
1 0.5 TJ = 150C 100C 25C 0.2 0.1 0.05 0.02 0.01 TJ = 150C 125C 100C
0.005 0.002 0.001 25C 0 10 20 70 30 40 50 60 80 VR REVERSE VOLTAGE (VOLTS) 90 100
0.0005 0.0002 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.0001
0.05
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR.
, AVERAGE FORWARD CURRENT (AMPS)
8 7 6 5 4 3 2 1 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) 180 dc SQUARE WAVE
P (AV), AVERAGE POWER DISSIPATION (WATTS) F
4 3.5 3 2.5 2 1.5 1 0.5 0 1.0 2.0 3.0 4.0 IF (AV), AVERAGE FORWARD CURRENT (AMPS) 5.0 SQUARE WAVE
dc
I
F (AV)
Figure 3. Current Derating (Mounting Method #3 per Note 3)
Figure 4. Power Dissipation
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2
MBR3100
400 300 C, CAPACITANCE (pF) 200
100 80
TJ = 25C f = 1 MHz
50 40 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance NOTE 3 -- MOUNTING DATA
Data shown for thermal resistance junction-to-ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method 1 2 3 Lead Length, L (in) 1/8 50 58 1/4 51 59 28 1/2 53 61 3/4 55 63 RqJA C/W C/W C/W
Mounting Method 1
P.C. Board where available copper surface is small.
L L
Mounting Method 2
Vector Push-In Terminals T-28
Mounting Method 3
P.C. Board with 2-1/2 X 2-1/2 copper surface.
L = 1/2''
Board Ground Plane
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MBR3100
PACKAGE DIMENSIONS
AXIAL LEAD CASE 267-05 ISSUE G
K D
1
A
2
NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267-04 OBSOLETE, NEW STANDARD 267-05. INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 ---
B
K
DIM A B D K
STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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4
MBR3100/D


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